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PD -94347
GA200NS61U
IGBT INT-A-PAK
Features
* Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ultra- soft recovery * Industry standard package * UL approved
4
High Side Switch Chopper Module Ultra-FastTM Speed IGBT
3
VCES = 600V VCE(on) typ. = 1.8V
5 1 2
@VGE = 15V, IC = 200A
Benefits
* Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Max.
600 200 400 400 400 20 2500 625 325 -40 to +150 -40 to +125
Units
V A
V W C
Thermal / Mechanical Characteristics
Parameter
RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module
Typ.
-- -- 0.1 -- -- 200
Max.
0.20 0.35 -- 4.0 3.0 --
Units
C/W N. m g
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1
11/06/01
GA200NS61U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 -- -- VGE = 0V, IC = 1mA -- 1.8 2.2 VGE = 15V, IC = 200A -- 1.9 -- V VGE = 15V, IC = 200A, TJ = 125C Gate Threshold Voltage 3.0 -- 6.0 IC = 1.25mA Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 1.25mA Forward Transconductance -- 175 -- S VCE = 25V, IC = 200A Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 600V -- -- 10 VGE = 0V, VCE = 600V, TJ = 125C Diode Forward Voltage - Maximum -- 1.6 2.2 V IF = 200A, VGE = 0V -- 1.7 -- IF = 200A, VGE = 0V, TJ = 125C Gate-to-Emitter Leakage Current -- -- 250 nA VGE = 20V
Dynamic Characteristics - TJ = 125C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 903 125 306 342 194 366 213 12 16 28 20068 1254 261 137 96 6731 5705 Max. Units Conditions 1355 VCC = 400V, VGE = 15V 188 nC IC = 135A 459 TJ = 25C -- RG1 = 27, RG2 = 0, -- ns IC = 200A -- VCC = 360V -- VGE = 15V -- mJ Inductive load -- 39 -- VGE = 0V -- pF VCC = 30V -- = 1 MHz -- ns IC = 200A -- A RG1 = 27 -- C RG2 = 0 -- A/s VCC = 360V di/dt=1227A/s
2
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GA200NS61U
1000
1000
I C, Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 125 C
TJ = 125 C
100
TJ = 25 C
10
TJ = 25 C
10 0.5
VGE = 15V 80s PULSE WIDTH
1.0 1.5 2.0 2.5 3.0
1 5.0
V CE = 25V 80s PULSE WIDTH
6.0 7.0 8.0 9.0
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
240
3.0
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH IC = 400 A
Maximum DC Collector Current(A)
200
160
120
2.0
IC = 200 A
80
IC = 100 A
40
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 3 - Maximum Collector Current vs. Case Temperature
Fig. 4- Typical Collector-to-Emitter Voltage vs. Junction Temperature
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3
GA200NS61U
40000
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 135A
16
C, Capacitance (pF)
30000
Cies
20000
12
8
Coes
10000
Cres
4
0 1 10 100
0 0 200 400 600 800 1000
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1
Thermal Response (ZthJC )
0.1
D = 0.50
0.20 0.10 0.05 0.02 0.01
P DM
SINGLE PULSE (THERMAL RESPONSE)
t 1 t2
Notes: 1. Duty factor D = t / t 12 2. Peak T = PDMx Z thJC + TC J
0.01 0.0001
A
1000
0.001
0.01
0.1
1
10
100
t 1, Rectangular Pulse Duration (sec)
Fig. 7 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA200NS61U
40
Total Switching Losses (mJ)
35
Total Switching Losses (mJ)
VCC = 360V VGE = 15V TJ = 125 C I C = 200A
1000
R G1=27;R G2 = 0 RG = Ohm VGE = 15V VCC = 360V
100
IC = 400 A IC = 200 A IC = 100 A
30
10
25
20 0 10 20 30 40 50
( RG , Gate Resistance (Ohm) )
1 -60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( C )
Fig. 8 - Typical Switching Losses vs. Gate Resistance
Fig. 9 - Typical Switching Losses vs. Junction Temperature
70
IC, Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG1 = Ohm RG =27;R G2 = 0 T J = 125 C 60 VCC = 360V VGE = 15V
50 40 30 20 10 0 0 100 200 300 400
600
500
VGE = 20V TJ = 125 VCE measured at terminal (Peak Voltage)
400
300
200 SAFE OPERATING AREA 100
0 0 100 200 300 400 500 600 700
I C , Collector-to-emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 10 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 11 - Reverse Bias SOA
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5
GA200NS61U
300
160
120
200
IF = 400A IF = 200A IF = 100A
IF = 400A
IRRM - (A)
trr - (ns)
IF = 200A IF = 100A
80
100
40
VR = 360V TJ = 125C TJ = 25C 0 500 1000 1500 2000
VR = 360V TJ = 125C TJ = 25C 0 500 1000 1500 2000
dif / dt - (A / s)
dif / dt - (A / s)
Fig. 12 - Typical Reverse Recovery vs. dif/dt
1000
Fig. 13 - Typical Recovery Current vs. dif/dt
12000
Instantaneous Forward Current - I F ( A )
10000
IF = 400A IF = 200A IF = 100A
8000
100
Qrr - (nC)
6000
T J = 125C T J = 25C
4000
2000
VR = 360V TJ = 125C TJ = 25C
10 0.0 0.5 1.0 1.5 2.0 2.5
0 500 1000 1500 2000
Forward Voltage Drop - V F ( V )
dif / dt - (A / s)
Fig. 14 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 15 - Typical Stored Charge vs. dif/dt
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GA200NS61U
L3 Vcc +Vg2 -Vg2 Rg1 DUT L1
Ic Vce 90% Vge
Rg2
+Vge
10% Vce Ic
90% Ic
L
td(off)
5% Ic tf
L2 Vcc=60% of BVces Ls= L1+L2+L3 Vge=15V
Eoff =
Vce Ic dt
t1+5S Vce ic dt t1
Fig. 16a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 16b - Test Waveforms for Circuit of Fig. 16a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt Ic dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
td(on)
tr
5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
DIODE RECOVERY WAVEFORMS
t4 Erec = Vd idIc dt Vd dt t3
t1
t4
Fig. 16c - Test Waveforms for Circuit of Fig. 16a,
Defining Eon, td(on), tr
Fig. 16d - Test Waveforms for Circuit of Fig. 16a,
Defining Erec, trr, Qrr, Irr
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GA200NS61U
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 16e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000F 100V Vc*
D.U.T.
RL = 0 - 480V
480V 4 X IC @25C
Figure 17. Clamped Inductive Load Test Circuit
Figure 18. Pulsed Collector Current Test Circuit
8
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GA200NS61U
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
See fig. 16 For screws M5x0.8 Pulse width 50s; single shot.
Case Outline -- INT-A-PAK
94.70 3.728 93.70 3.689] 80.30 79.70
[
NOT ES : 1. ALL DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES ]. 2. CONTROLLING DIMENS ION: MILLIMETER. 4.50 3.50 6 7 17.50 16.50 .650] [.689 .138] [.177
[
3.161 3.138
]
2X 23.50 22.50 .886] [.925
11 10 34.70 33.70 1.327] [1.366 1 8 9 2 3
5 4
6.80 2X O 6.20
.244] [.267 4X F AS TON TAB (110) 2.8 x 0.5 [.110 x .020]
3X M5 8 [.314] MAX.
42.00 41.00
1.614] [1.654
8.00 6.60
.260] [.315
24.00 23.00
.906] [.945
30.50 29.00
1.142 [1.201 ]
0.15 [.0059] CONVEX 92.10 91.10 3.587] [3.626
8.65 7.65
.301 [.341 ] 32.00 31.00
2X 13.30 12.70
.500] [.524
[
1.260 1.220]
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01
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9

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